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Analytical Current Model for Long-Channel Junctionless Double-Gate MOSFETs.
- Source :
-
IEEE Transactions on Electron Devices . Mar2016, Vol. 63 Issue 3, p959-965. 7p. - Publication Year :
- 2016
-
Abstract
- In this paper, a SPICE compatible analytical surface-potential-based model for junctionless symmetric double-gate (JLDG) MOSFETs is described. By using the gradual-channel-approximation, the 1-D Poisson’s equation is solved to obtain the surface and central potential in the JLDG MOSFET for long channel case. A continuous drain current model with smooth transitions from fully depleted region to partially depleted and accumulation regions is then derived from the Pao-Sah’s dual integral as a function of the surface and central potential at the source and drain terminals. The model is verified and validated by numerical simulations over a wide range of doping concentrations and device geometries. The model has been implemented in a circuit simulator and used to simulate some circuit building blocks without any convergent problem. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 63
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 113411568
- Full Text :
- https://doi.org/10.1109/TED.2016.2520558