Current saturation effect for pentacene-based static induction transistor under negative drain-source and gate voltages.

Usually, the drain-source current ( I DS ) increases with positive drain-source voltage ( V DS ) for pentacene-based organic static induction transistor (OSIT) ITO(Source)/Pentacene/Al(Gate)/Pentacene/Au(Drain) and it shows an inherent rectifying property under negative gate voltages ( V G ), i.e. the slope of I DS vs. V DS curve increases with V DS but without any current saturation effect. In this paper, we investigated the electrical characteristics of pentacene-based OSIT ITO/Pentacene(80 nm)/Al(15 nm)/Pentacene(80 nm)/Au under negative V DS and V G , and found that I DS changed from rectifying property to saturation effect when the magnitude of negative V DS was increased from 0 V to −6 V under negative V G , and the turn-on voltage ( V ON ) moved to larger negative voltages when the magnitude of negative V G increased and the movement step of V ON gets smaller after keeping the device for a long time, and the possible mechanisms for such a kind of current modulation were discussed. [ABSTRACT FROM AUTHOR]