Effects of thermal annealing on photoluminescence of Si+/C+ implanted SiO2 films.

The mechanisms of photoluminescence (PL) originating from Si + /C + implanted SiO 2 are still unclear and need to be clarified. Thus, the purpose of this study is to thoroughly investigate the effects of ion implantation and post-annealing temperature on microstructures and PL characteristics of the Si + /C + implanted SiO 2 films. A comparative analysis was also conducted to clarify the different optical properties between the Si + and Si + /C + implanted SiO 2 films. In this study, thermally-grown SiO 2 films on Si substrates were used as the matrix materials. The Si + ions and C + ions were separately implanted into the SiO 2 films at room temperature. After ion implantation, the post-annealing treatments were carried out using the furnace annealing (FA) method at various temperatures (600–1100 °C) for 1 h in a N 2 ambient. The PL characteristics of the implanted SiO 2 films were analyzed using a fluorescence spectrophotometer. The results revealed that the distinct PL peaks were observed at approximately 310, 450 and 650 nm in the Si + -implanted SiO 2 films, which can be attributed to the defects, the so-called oxygen deficiency centers (ODCs) and non-bridging oxygen hole centers (NBOHCs), in the materials. In contrast to the Si + ion implantation, the SiO 2 films which were sequentially implanted with Si + and C + ions and annealed at 1100 °C can emit white light corresponding to the PL peaks located at around 420, 520 and 720 nm, those can be assigned to the Si–C bonding, C–C graphite-like structure (sp 2 ), and Si nanocrystals, respectively. Moreover, a correlation between the optical properties, microstructures, and bonding configurations of the Si + /C + implanted SiO 2 films was also established in this study. [ABSTRACT FROM AUTHOR]