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Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors.
- Source :
-
IEEE Transactions on Industrial Electronics . Apr2016, Vol. 63 Issue 4, p1995-2004. 10p. - Publication Year :
- 2016
-
Abstract
- An experimental analysis of the behavior under short-circuit conditions of three different silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short circuits. A transient thermal device simulation was performed to determine the temperature stress on the die during a short-circuit event, for the SiC MOSFET. It was found that, for reliability reasons, the short-circuit time should be limited to values well below Si IGBT tolerances. Guidelines toward a rugged design for short-circuit protection (SCP) are presented with an emphasis on improving the reliability and availability of the overall system. A SiC device driver with an integrated SCP is presented for each device-type, respectively, where a short-circuit detection is added to a conventional driver design in a simple way. The SCP driver was experimentally evaluated with a detection time of 180 ns. For all devices, short-circuit times well below 1 \upmu\texts were achieved. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02780046
- Volume :
- 63
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Industrial Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 113814352
- Full Text :
- https://doi.org/10.1109/TIE.2015.2506628