Sensing Power MOSFET Junction Temperature Using Gate Drive Turn-On Current Transient Properties.

MLA

Niu, He, and Robert D. Lorenz. “Sensing Power MOSFET Junction Temperature Using Gate Drive Turn-On Current Transient Properties.” IEEE Transactions on Industry Applications, vol. 52, no. 2, Mar. 2016, pp. 1677–87. EBSCOhost, https://doi.org/10.1109/TIA.2015.2497202.

APA

Niu, H., & Lorenz, R. D. (2016). Sensing Power MOSFET Junction Temperature Using Gate Drive Turn-On Current Transient Properties. IEEE Transactions on Industry Applications, 52(2), 1677–1687. https://doi.org/10.1109/TIA.2015.2497202

Chicago

Niu, He, and Robert D. Lorenz. 2016. “Sensing Power MOSFET Junction Temperature Using Gate Drive Turn-On Current Transient Properties.” IEEE Transactions on Industry Applications 52 (2): 1677–87. doi:10.1109/TIA.2015.2497202.