Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe.

MLA

Wang, Bing, et al. “Direct MOCVD Epitaxy of GaAsP on SiGe Virtual Substrate without Growth of SiGe.” Journal of Crystal Growth, vol. 441, May 2016, pp. 78–83. EBSCOhost, https://doi.org/10.1016/j.jcrysgro.2016.02.011.

APA

Wang, B., Wang, C., Kohen, D. A., Made, R. I., Lee, K. E. K., Kim, T., Milakovich, T., Fitzgerald, E. A., Yoon, S. F., & Michel, J. (2016). Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe. Journal of Crystal Growth, 441, 78–83. https://doi.org/10.1016/j.jcrysgro.2016.02.011

Chicago

Wang, Bing, Cong Wang, David A. Kohen, Riko I. Made, Kenneth Eng Kian Lee, Taewan Kim, Tim Milakovich, Eugene A. Fitzgerald, Soon Fatt Yoon, and Jurgen Michel. 2016. “Direct MOCVD Epitaxy of GaAsP on SiGe Virtual Substrate without Growth of SiGe.” Journal of Crystal Growth 441 (May): 78–83. doi:10.1016/j.jcrysgro.2016.02.011.