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Demonstration of L-Shaped Tunnel Field-Effect Transistors.
- Source :
-
IEEE Transactions on Electron Devices . Apr2016, Vol. 63 Issue 4, p1774-1778. 5p. - Publication Year :
- 2016
-
Abstract
- An L-shaped tunnel FET (TFET), which features band-to-band tunneling (BTBT) perpendicular to the channel direction, is experimentally demonstrated for the first time. It is more scalable than other vertical-BTBT-based TFET designs and provides more than $1000\times $ higher ON-current ( $I_{{\mathrm{\scriptscriptstyle ON}}} ) than a conventional planar TFET with the same gate overdrive ( V\mathrm{ov} ) of 0.8 V, due to improved subthreshold swing ( S ) and larger tunnel junction area. Its temperature dependence, constant $S$ , and nonlinear output characteristics are discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 63
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 114035662
- Full Text :
- https://doi.org/10.1109/TED.2015.2472496