Cite
Dual-Gate JFET Modeling I: Generalization to Include MOS Gates and Efficient Method to Calculate Drain–Source Saturation Voltage.
MLA
Xia, Kejun, et al. “Dual-Gate JFET Modeling I: Generalization to Include MOS Gates and Efficient Method to Calculate Drain–Source Saturation Voltage.” IEEE Transactions on Electron Devices, vol. 63, no. 4, Apr. 2016, pp. 1408–15. EBSCOhost, https://doi.org/10.1109/TED.2016.2525737.
APA
Xia, K., McAndrew, C. C., & Grote, B. (2016). Dual-Gate JFET Modeling I: Generalization to Include MOS Gates and Efficient Method to Calculate Drain–Source Saturation Voltage. IEEE Transactions on Electron Devices, 63(4), 1408–1415. https://doi.org/10.1109/TED.2016.2525737
Chicago
Xia, Kejun, Colin C. McAndrew, and Bernhard Grote. 2016. “Dual-Gate JFET Modeling I: Generalization to Include MOS Gates and Efficient Method to Calculate Drain–Source Saturation Voltage.” IEEE Transactions on Electron Devices 63 (4): 1408–15. doi:10.1109/TED.2016.2525737.