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Compact Model of Dielectric Breakdown in Spin-Transfer Torque Magnetic Tunnel Junction.
- Source :
-
IEEE Transactions on Electron Devices . Apr2016, Vol. 63 Issue 4, p1762-1767. 6p. - Publication Year :
- 2016
-
Abstract
- Spin-transfer torque magnetic tunnel junction (MTJ) is a promising candidate for nonvolatile memories thanks to its high speed, low power, infinite endurance, and easy integration with CMOS circuits. However, a relatively high current flowing through an MTJ is always required by most of the switching mechanisms, which results in a high electric field in the MTJ and a significant self-heating effect. This may lead to the dielectric breakdown of the ultrathin ( $\sim 1$ nm) oxide barrier in the MTJ and cause functional errors of hybrid CMOS/MTJ circuits. This paper analyzes the physical mechanisms of time-dependent dielectric breakdown (TDDB) in an oxide barrier and proposes an SPICE-compact model of the MTJ. The simulation results show great consistency with the experimental measurements. This model can be used to execute a more realistic design according to the constraints obtained from simulation. The users can estimate the lifetime, the operation voltage margin, and the failure probability caused by TDDB in the MTJ-based circuits. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 63
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 114035704
- Full Text :
- https://doi.org/10.1109/TED.2016.2533438