Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements.

MLA

Huber, Martin, et al. “Characterization of AlN/AlGaN/GaN:C Heterostructures Grown on Si(111) Using Atom Probe Tomography, Secondary Ion Mass Spectrometry, and Vertical Current-Voltage Measurements.” Journal of Applied Physics, vol. 119, no. 12, Mar. 2016, pp. 125701-1-125701–06. EBSCOhost, https://doi.org/10.1063/1.4944652.

APA

Huber, M., Daumiller, I., Andreev, A., Silvestri, M., Knuuttila, L., Lundskog, A., Wahl, M., Kopnarski, M., & Bonanni, A. (2016). Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements. Journal of Applied Physics, 119(12), 125701-1-125701–125706. https://doi.org/10.1063/1.4944652

Chicago

Huber, Martin, Ingo Daumiller, Andrei Andreev, Marco Silvestri, Lauri Knuuttila, Anders Lundskog, Michael Wahl, Michael Kopnarski, and Alberta Bonanni. 2016. “Characterization of AlN/AlGaN/GaN:C Heterostructures Grown on Si(111) Using Atom Probe Tomography, Secondary Ion Mass Spectrometry, and Vertical Current-Voltage Measurements.” Journal of Applied Physics 119 (12): 125701-1-125701–6. doi:10.1063/1.4944652.