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Down-conversion luminescence from (Ce, Yb) co-doped oxygen-rich silicon oxides.
- Source :
-
Journal of Applied Physics . 3/28/2016, Vol. 119 Issue 12, p123105-1-123105-7. 7p. 1 Chart, 7 Graphs. - Publication Year :
- 2016
-
Abstract
- We have studied down-conversion photoluminescence (PL) from (Ce, Yb) co-doped "oxygen rich" silicon oxide films prepared by sputtering and annealing. The Ce3+ ~510nm PL is sensitive to the Ce concentration of the films and is much stronger for 3 at.% Ce than for 2 at.% Ce after annealing at 1200 °C. The PL emission and excitation spectroscopy results indicate that the excitation of Yb3+ is mainly through an energy transfer from Ce3+ to Yb3+, oxide defects also play a role in the excitation of Yb3+ after lower temperature (~800 °C) annealing. The Ce3+ 510 nm photon excites mostly only one Yb3+ 980nm photon. Temperature-dependent PL measurements suggest that the energy transfer from Ce3+ to Yb3+ is partly thermally activated. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 119
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 114181616
- Full Text :
- https://doi.org/10.1063/1.4945111