Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires.

MLA

Eftychis, S., et al. “Understanding the Effects of Si (111) Nitridation on the Spontaneous Growth and Properties of GaN Nanowires.” Journal of Crystal Growth, vol. 442, May 2016, pp. 8–13. EBSCOhost, https://doi.org/10.1016/j.jcrysgro.2016.02.028.

APA

Eftychis, S., Kruse, J., Koukoula, T., Kehagias, T., Komninou, P., Adikimenakis, A., Tsagaraki, K., Androulidaki, M., Tzanetakis, P., Iliopoulos, E., & Georgakilas, A. (2016). Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires. Journal of Crystal Growth, 442, 8–13. https://doi.org/10.1016/j.jcrysgro.2016.02.028

Chicago

Eftychis, S., J. Kruse, T. Koukoula, Th. Kehagias, Ph. Komninou, A. Adikimenakis, K. Tsagaraki, et al. 2016. “Understanding the Effects of Si (111) Nitridation on the Spontaneous Growth and Properties of GaN Nanowires.” Journal of Crystal Growth 442 (May): 8–13. doi:10.1016/j.jcrysgro.2016.02.028.