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Nitrogen anion doping as a strategy to suppress negative gate-bias illumination instability of ZnSnO thin film transistor.
- Source :
-
Applied Physics Letters . 4/4/2016, Vol. 108 Issue 14, p143505-1-143505-5. 5p. 5 Graphs. - Publication Year :
- 2016
-
Abstract
- This work presents a strategy of nitrogen anion doping to suppress negative gate-bias illumination instability. The electrical performance and negative gate-bias illumination stability of the ZnSnON thin film transistors (TFTs) are investigated. Compared with ZnSnO-TFT, ZnSnON-TFT has a 53% decrease in the threshold voltage shift under negative bias illumination stress and electrical performance also progresses obviously. The stability improvement of ZnSnON-TFT is attributed to the reduction in ionized oxygen vacancy defects and the photodesorption of oxygen-related molecules. It suggests that anion doping can provide an effective solution to the adverse tradeoff between field effect mobility and negative bias illumination stability. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ANIONS
*DOPING agents (Chemistry)
*THIN film transistors
*NITROGEN
*PHOTODESORPTION
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 108
- Issue :
- 14
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 114435305
- Full Text :
- https://doi.org/10.1063/1.4945735