Cite
Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process.
MLA
Tadjer, Marko J., et al. “Nanocrystalline Diamond Capped AlGaN/GaN High Electron Mobility Transistors via a Sacrificial Gate Process.” Physica Status Solidi. A: Applications & Materials Science, vol. 213, no. 4, Apr. 2016, pp. 893–97. EBSCOhost, https://doi.org/10.1002/pssa.201532570.
APA
Tadjer, M. J., Anderson, T. J., Feygelson, T. I., Hobart, K. D., Hite, J. K., Koehler, A. D., Wheeler, V. D., Pate, B. B., Eddy, C. R., & Kub, F. J. (2016). Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process. Physica Status Solidi. A: Applications & Materials Science, 213(4), 893–897. https://doi.org/10.1002/pssa.201532570
Chicago
Tadjer, Marko J., Travis J. Anderson, Tatyana I. Feygelson, Karl D. Hobart, Jennifer K. Hite, Andrew D. Koehler, Virginia D. Wheeler, Bradford B. Pate, Charles R. Eddy, and Fritz J. Kub. 2016. “Nanocrystalline Diamond Capped AlGaN/GaN High Electron Mobility Transistors via a Sacrificial Gate Process.” Physica Status Solidi. A: Applications & Materials Science 213 (4): 893–97. doi:10.1002/pssa.201532570.