Cite
Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse.
MLA
Xiao-Wen Xi, et al. “Damage Effect and Mechanism of the GaAs Pseudomorphic High Electron Mobility Transistor Induced by the Electromagnetic Pulse.” Chinese Physics B, vol. 25, no. 4, Apr. 2016, p. 1. EBSCOhost, https://doi.org/10.1088/1674-1056/25/4/048503.
APA
Xiao-Wen Xi, Chang-Chun Chai, Gang Zhao, Yin-Tang Yang, Xin-Hai Yu, & Yang Liu. (2016). Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse. Chinese Physics B, 25(4), 1. https://doi.org/10.1088/1674-1056/25/4/048503
Chicago
Xiao-Wen Xi, Chang-Chun Chai, Gang Zhao, Yin-Tang Yang, Xin-Hai Yu, and Yang Liu. 2016. “Damage Effect and Mechanism of the GaAs Pseudomorphic High Electron Mobility Transistor Induced by the Electromagnetic Pulse.” Chinese Physics B 25 (4): 1. doi:10.1088/1674-1056/25/4/048503.