Back to Search
Start Over
On the hole accelerator for III-nitride light-emitting diodes.
- Source :
-
Applied Physics Letters . 4/11/2016, Vol. 108 Issue 15, p151105-1-151105-5. 5p. 1 Diagram, 5 Graphs. - Publication Year :
- 2016
-
Abstract
- In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-AlxGa1-xN heterojunction) with different designs, including the AlN composition in the p-AlxGa1-xN layer, and the thickness for the p-GaN layer and the p-AlxGa1-xN layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-AlxGa1-xN layer increases. Meanwhile, with p-GaN layer or p-AlxGa1-xN layer thickening, the energy that the holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-AlxGa1-xN design, and the hole accelerator can effectively increase the hole injection if properly designed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 108
- Issue :
- 15
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 114575901
- Full Text :
- https://doi.org/10.1063/1.4947025