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Ionic Metal–Oxide TFTs for Integrated Switching Applications.
- Source :
-
IEEE Transactions on Electron Devices . May2016, Vol. 63 Issue 5, p1921-1927. 7p. - Publication Year :
- 2016
-
Abstract
- Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those that can leverage their low-temperature, substrate-agnostic process integration potential. In this paper, enhancement-mode zinc-oxide TFTs were fabricated and their switching performance evaluated. These TFTs exhibit the drain-current density of 0.6 A/mm and minimal frequency dispersion, as evidenced by dynamic current–voltage tests. A high-frequency power switch figure of merit $R_{{\mathrm{\scriptscriptstyle ON}}}Q_{G} of 359 \textm\Omega \,\cdot \, nC was experimentally determined for 0.75- \mu \textm long-channel devices, and through scaling 45.9 \textm\Omega \,\cdot \, nC is achievable for 11 V-rated devices (where R\mathrm{\scriptscriptstyle ON} is ON-state drain–source resistance, and QG is gate charge). An RF switch cutoff frequency fc of 25 GHz was measured for the same 0.75- \mu \textm TFT, whereas fc exceeding 500 GHz and power handling in the tens of watts are projected with optimization. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 63
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 114706490
- Full Text :
- https://doi.org/10.1109/TED.2016.2544200