Alternately double-sided growth of low-curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy.

GaN layers have been grown on double-side-polished sapphire substrates using hydride vapor phase epitaxy. The GaN layers on each side of the substrate were alternately grown using a new susceptor with a rotating mechanism. Although a conventional GaN layer grown on one side of a sapphire substrate exhibits a small radius of curvature, the alternately double-sided-grown GaN template exhibits a large radius of curvature. The radius of curvature of the alternately double-sided-grown GaN template with a thickness of 180 μm was found to be approximately 16.4 m, and was larger than the 0.5 m radius of curvature of the conventional GaN template. [ABSTRACT FROM AUTHOR]