Cite
Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy.
MLA
Gelczuk, Ł., et al. “Origin and Annealing of Deep-Level Defects in GaNAs Grown by Metalorganic Vapor Phase Epitaxy.” Journal of Applied Physics, vol. 119, no. 18, May 2016, pp. 185706-1-185706–08. EBSCOhost, https://doi.org/10.1063/1.4949514.
APA
Gelczuk, Ł., Stokowski, H., DŁbrowska-Szata, M., & Kudrawiec, R. (2016). Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 119(18), 185706-1-185706–185708. https://doi.org/10.1063/1.4949514
Chicago
Gelczuk, Ł., H. Stokowski, M. DŁbrowska-Szata, and R. Kudrawiec. 2016. “Origin and Annealing of Deep-Level Defects in GaNAs Grown by Metalorganic Vapor Phase Epitaxy.” Journal of Applied Physics 119 (18): 185706-1-185706–8. doi:10.1063/1.4949514.