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Optoelectronic devices on AlGaN/GaN HEMT platform.
- Source :
-
Physica Status Solidi. A: Applications & Materials Science . May2016, Vol. 213 Issue 5, p1213-1221. 9p. - Publication Year :
- 2016
-
Abstract
- Integration of a photon source into the AlGaN/GaN high election mobility transistor (HEMT) platform will realize the functionality of on-chip optical pumping of deep electron traps which suppress the dynamic performances of power HEMTs. Here, we report a Schottky-on-heterojunction light-emitting diode (SoH-LED) realized on the p-doping-free lateral AlGaN/GaN heterostructure. A physical mode based on hot electron induced surface states impact ionization was proposed to explain the hole generation and injection processes in this p-doping-free SoH-LED. Since the SoH-LED shares identical epitaxial structures with HEMT, integration of SoH-LED and HEMT requires no additional epi-layers during the wafer growth and minimum process modification during device fabrication. The SoH-LED structure was seamlessly integrated into the HEMT platform as an on-chip photon source. Experiment results showed that the SoH-LED photons can effectively assist the electron de-trapping processes from both of the surface and bulk deep traps, demonstrating the feasibility of using on-chip generated photons to improve the dynamic performances of AlGaN/GaN power HEMTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 213
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 115376815
- Full Text :
- https://doi.org/10.1002/pssa.201532782