Hump Effects of Germanium/Silicon Heterojunction Tunnel Field-Effect Transistors.

The hump effects of germanium/silicon heterojunction tunnel field-effect transistors are discussed. Simulation results show that they are originated when indirect band-to-band tunneling is converted into direct one as gate voltage ( Vg ) increases. In order to suppress the hump effects, two ideas are proposed. First, the length of intrinsic-germanium channel ( L\mathrm{ Ge} ) is optimized using a novel process flow. Second, gate-to-channel coupling is improved by increasing source doping concentration ( NS ). [ABSTRACT FROM AUTHOR]