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Detecting Unintended Schottky Junctions and Their Impact on Tunnel FET Characteristics.
- Source :
-
IEEE Transactions on Electron Devices . Jun2016, Vol. 63 Issue 6, p2577-2582. 6p. - Publication Year :
- 2016
-
Abstract
- We demonstrate in this paper a fast and simple method for evidencing and classifying the ambipolar response of tunneling-based field effect transistors in pull-down (nFET-like) and pull-up (pFET-like) modes. This technique enables to unequivocally determine whether carrier injection on either side of the device occurs via band-to-band-tunneling or single carrier tunneling through a Schottky barrier. It was applied to Silicon On Insulator (SOI) and SiGeOI tunnel FETs, which were fabricated to be nominally identical, yet showed a discrepancy of several orders of magnitude in ON-state current. The electrostatic analysis of their respective ambipolar signature revealed that the high-drive-current devices were in fact operating like Schottky barrier FETs in the pull-up mode due to a silicidation defect occurring only on the n-doped side. These new findings bring about a reassessment of previously published results in terms of on current—-subthreshold swing tradeoff perspectives for nanowire SiGe pTFETs. On the other hand, the resulting unintended asymmetrical device geometry suggests a possible route to fabricating Schottky barrier FETs with reduced parasitic leakage. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 63
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 115559775
- Full Text :
- https://doi.org/10.1109/TED.2016.2556580