Cite
Electrical Properties of Metal-Induced Laterally Crystallized p-Type LTPS-TFT With High- $\kappa $ ZrTiO4 Gate Dielectric Featuring Low Equivalent-Oxide-Thickness.
MLA
Park, Jae Hyo, et al. “Electrical Properties of Metal-Induced Laterally Crystallized p-Type LTPS-TFT With High- $\kappa $ ZrTiO4 Gate Dielectric Featuring Low Equivalent-Oxide-Thickness.” IEEE Transactions on Electron Devices, vol. 63, no. 6, June 2016, pp. 2391–97. EBSCOhost, https://doi.org/10.1109/TED.2016.2544862.
APA
Park, J. H., Han, J. S., & Joo, S. K. (2016). Electrical Properties of Metal-Induced Laterally Crystallized p-Type LTPS-TFT With High- $\kappa $ ZrTiO4 Gate Dielectric Featuring Low Equivalent-Oxide-Thickness. IEEE Transactions on Electron Devices, 63(6), 2391–2397. https://doi.org/10.1109/TED.2016.2544862
Chicago
Park, Jae Hyo, Ji Su Han, and Seung Ki Joo. 2016. “Electrical Properties of Metal-Induced Laterally Crystallized p-Type LTPS-TFT With High- $\kappa $ ZrTiO4 Gate Dielectric Featuring Low Equivalent-Oxide-Thickness.” IEEE Transactions on Electron Devices 63 (6): 2391–97. doi:10.1109/TED.2016.2544862.