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The role of an SiC interlayer at a graphite–silicon liquid interface in the solution growth of SiC crystals.
- Source :
-
Ceramics International . Aug2016, Vol. 42 Issue 10, p11611-11618. 8p. - Publication Year :
- 2016
-
Abstract
- SiC crystal growth using the top seeded solution growth (TSSG) method involves the precipitation of solid SiC from carbon that is dissolved in a silicon melt. The growth rate of SiC is strongly influenced by the solubility of C in liquid Si, which is quite low. In this study, the dissolution of C from graphite to the Si melt was explored by observing the formation of an SiC interlayer at a graphite – Si liquid interface. The SiC interlayer was observed to become thickened during the several hours needed to reach a certain thickness at 1500 °C. Assuming that the SiC interlayer is a direct C source, a pre-formed SiC layer was coated on the graphite crucible to evaluate its effect on the concentration of C in the Si melt. As a result, the concentration of C in the Si melt increased within a short time, especially at low temperatures. By applying the SiC coated crucible to the TSSG process for SiC crystal growth, we confirmed that the development of a pre-formed SiC layer enhanced the growth rate of SiC crystals, especially at the initial stage of crystal growth at low temperatures. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02728842
- Volume :
- 42
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Ceramics International
- Publication Type :
- Academic Journal
- Accession number :
- 115598465
- Full Text :
- https://doi.org/10.1016/j.ceramint.2016.04.060