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Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application.
- Source :
-
Scientific Reports . 6/3/2016, p26763. 1p. - Publication Year :
- 2016
Details
- Language :
- English
- ISSN :
- 20452322
- Database :
- Academic Search Index
- Journal :
- Scientific Reports
- Publication Type :
- Academic Journal
- Accession number :
- 115900972
- Full Text :
- https://doi.org/10.1038/srep26763