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Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (0 0 1) Si substrate by metalorganic vapor phase epitaxy
- Source :
-
Journal of Crystal Growth . Jan2004, Vol. 260 Issue 3/4, p360. 6p. - Publication Year :
- 2004
-
Abstract
- We have investigated the morphology of the high-temperature-grown AlN nucleation layer and its role in the early stage of GaN growth, by means of transmission electron microscopy. The nitride was selectively grown on a 7-degree off-oriented (0 0 1) patterned Si substrate by metalorganic vapor phase epitaxy. AlN was deposited on the inclined unmasked (1 1 1) facet in the form of islands. The size of the islands varied along the slope, which is attributable to the diffusion of the growth species in the vapor phase. The GaN nucleation occurred at the region where rounded AlN islands formed densely. The threading dislocations were observed to generate in the GaN nucleated region. [Copyright &y& Elsevier]
- Subjects :
- *ALUMINUM nitride
*NUCLEATION
*TRANSMISSION electron microscopy
*GALLIUM nitride
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 260
- Issue :
- 3/4
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 11614887
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2003.08.074