Back to Search
Start Over
Critical thickness for dislocation generation in epitaxial piezoelectric thin films.
- Source :
-
Philosophical Magazine . 11/1/2003, Vol. 83 Issue 31-34, p3753-3764. 12p. - Publication Year :
- 2003
-
Abstract
- Dislocations form in epitaxial thin films above a critical thickness, when the stress due to the film-substrate mismatch becomes excessive. This phenomenon has been extensively investigated in non-piezoelectric thin films. In piezoelectric films, the mismatch strain field and the electric field are coupled, and the critical thickness depends on an extra physical variable: the electric field. In this paper, the critical thickness for dislocation formation in a piezoelectric film is derived. The dependence of the critical thickness on the piezoelectric properties of the Al x Ga 1- x N/GaN system is then discussed. [ABSTRACT FROM AUTHOR]
- Subjects :
- *PIEZOELECTRIC materials
*THIN films
*DEFORMATIONS (Mechanics)
*MATERIAL plasticity
Subjects
Details
- Language :
- English
- ISSN :
- 14786435
- Volume :
- 83
- Issue :
- 31-34
- Database :
- Academic Search Index
- Journal :
- Philosophical Magazine
- Publication Type :
- Academic Journal
- Accession number :
- 11623399
- Full Text :
- https://doi.org/10.1080/14786430310001600196