Full-Component Modeling and Simulation of Charged Device Model ESD.

Authors :: Meng, Kuo-Hsuan
Shukla, Vrashank
Rosenbaum, Elyse
Source :: IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems. Jul2016, Vol. 35 Issue 7, p1105-1113. 9p.
Publication Year :: 2016
Abstract: This paper presents a methodology to construct an equivalent circuit model of a packaged integrated circuit mounted on a field-induced charged device model electrostatic discharge tester. Circuit simulation is used to obtain the full-component current and voltage distributions. This paper focuses on predicting overvoltage stress at power domain crossing circuits. [ABSTRACT FROM PUBLISHER]

Subjects :: *ELECTRIC breakdown
*ELECTRIC circuit networks
*FAULT currents
*OVERVOLTAGE
*ELECTROSTATIC discharges

Language :: English
ISSN :: 02780070
Volume :: 35
Issue :: 7
Database :: Academic Search Index
Journal :: IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems
Publication Type :: Academic Journal
Accession number :: 116318703
Full Text :: https://doi.org/10.1109/TCAD.2015.2495196