Cite
Performance Enhancement in Bipolar Junction Transistors Using Uniaxial Stress on (100) Silicon.
MLA
Gnanachchelvi, P., et al. “Performance Enhancement in Bipolar Junction Transistors Using Uniaxial Stress on (100) Silicon.” IEEE Transactions on Electron Devices, vol. 63, no. 7, July 2016, pp. 2643–49. EBSCOhost, https://doi.org/10.1109/TED.2016.2560899.
APA
Gnanachchelvi, P., Jaeger, R. C., Wilamowski, B. M., Niu, G., Hussain, S., Suhling, J. C., & Hamilton, M. C. (2016). Performance Enhancement in Bipolar Junction Transistors Using Uniaxial Stress on (100) Silicon. IEEE Transactions on Electron Devices, 63(7), 2643–2649. https://doi.org/10.1109/TED.2016.2560899
Chicago
Gnanachchelvi, P., R. C. Jaeger, B. M. Wilamowski, G. Niu, S. Hussain, J. C. Suhling, and M. C. Hamilton. 2016. “Performance Enhancement in Bipolar Junction Transistors Using Uniaxial Stress on (100) Silicon.” IEEE Transactions on Electron Devices 63 (7): 2643–49. doi:10.1109/TED.2016.2560899.