Back to Search
Start Over
High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor.
- Source :
-
Sensors (14248220) . Jun2016, Vol. 16 Issue 6, p839. 12p. - Publication Year :
- 2016
-
Abstract
- In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 μm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 14248220
- Volume :
- 16
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Sensors (14248220)
- Publication Type :
- Academic Journal
- Accession number :
- 116390579
- Full Text :
- https://doi.org/10.3390/s16060839