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A high-efficiency gan power amplifier with harmonic control based on Si-IPDS.
- Source :
-
Microwave & Optical Technology Letters . Sep2016, Vol. 58 Issue 9, p2178-2182. 5p. - Publication Year :
- 2016
-
Abstract
- ABSTRACT This article presents a high-efficiency power amplifier using quasi-MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate-source voltage waveform control with Class-F operation achieves significant efficiency improvements. The quasi-MMIC technology using silicon-integrated passive devices (Si-IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class-F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a Psat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2178-2182, 2016 [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08952477
- Volume :
- 58
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Microwave & Optical Technology Letters
- Publication Type :
- Academic Journal
- Accession number :
- 116397072
- Full Text :
- https://doi.org/10.1002/mop.30003