High-Pressure Preparation of High-Density Cu2ZnSnS4 Materials.

High-density Cu2ZnSnS4 (CZTS) materials are prepared via the mechanical alloying and high pressure sintering method using Cu2S, ZnS and SnS2 as the raw materials. The morphological, structural, compositional and electrical properties of the materials are investigated by using x-ray diffraction, scanning electron microscopy, and energy dispersive x-ray spectroscopy, as well as by the Raman scattering and the Hall Effect measurements. The CZTS synthesized under 5 GPa and 800°C shows a p-type conductivity, with a resistivity of 9.69 × 10−2 Ω·cm and a carrier concentration of 1.45 × 1020 cm−3. It is contributed to by the large grains in the materials reducing the grain boundaries, thus effectively reducing the recombination of the charge carriers. [ABSTRACT FROM AUTHOR]