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Copper vapor-assisted growth of hexagonal graphene domains on silica islands.
- Source :
-
Applied Physics Letters . 7/11/2016, Vol. 109 Issue 2, p023106-1-023106-5. 4p. 1 Black and White Photograph, 1 Diagram, 3 Graphs. - Publication Year :
- 2016
-
Abstract
- Silica (SiO2) islands with a dendritic structure were prepared on polycrystalline copper foil, using silane (SiH4) as a precursor, by annealing at high temperature. Assisted by copper vapor from bare sections of the foil, single-layer hexagonal graphene domains were grown directly on the SiO2 islands by chemical vapor deposition. Scanning electron microscopy, atomic force microscopy, Raman spectra, and X-ray photoelectron spectroscopy confirm that hexagonal graphene domains, each measuring several microns, were synthesized on the silica islands. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 109
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 116849956
- Full Text :
- https://doi.org/10.1063/1.4958872