Cite
Toward Multiple-Bit-Per-Cell Memory Operation With Stable Resistance Levels in Phase Change Nanodevices.
MLA
Gokce, Aisha, et al. “Toward Multiple-Bit-Per-Cell Memory Operation With Stable Resistance Levels in Phase Change Nanodevices.” IEEE Transactions on Electron Devices, vol. 63, no. 8, Aug. 2016, pp. 3103–08. EBSCOhost, https://doi.org/10.1109/TED.2016.2574498.
APA
Gokce, A., Cinar, I., Ozdemir, S. C., Cogulu, E., Stipe, B., Katine, J. A., & Ozatay, O. (2016). Toward Multiple-Bit-Per-Cell Memory Operation With Stable Resistance Levels in Phase Change Nanodevices. IEEE Transactions on Electron Devices, 63(8), 3103–3108. https://doi.org/10.1109/TED.2016.2574498
Chicago
Gokce, Aisha, Ibrahim Cinar, Servet C. Ozdemir, Egecan Cogulu, Barry Stipe, Jordan A. Katine, and Ozhan Ozatay. 2016. “Toward Multiple-Bit-Per-Cell Memory Operation With Stable Resistance Levels in Phase Change Nanodevices.” IEEE Transactions on Electron Devices 63 (8): 3103–8. doi:10.1109/TED.2016.2574498.