Cite
Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated With Silicon Active Substrate (III-V-OIAS).
MLA
Lin, Jianqiang, et al. “Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated With Silicon Active Substrate (III-V-OIAS).” IEEE Transactions on Electron Devices, vol. 63, no. 8, Aug. 2016, pp. 3088–95. EBSCOhost, https://doi.org/10.1109/TED.2016.2579642.
APA
Lin, J., Czornomaz, L., Daix, N., Antoniadis, D. A., & del Alamo, J. A. (2016). Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated With Silicon Active Substrate (III-V-OIAS). IEEE Transactions on Electron Devices, 63(8), 3088–3095. https://doi.org/10.1109/TED.2016.2579642
Chicago
Lin, Jianqiang, Lukas Czornomaz, Nicolas Daix, Dimitri A. Antoniadis, and Jesus A. del Alamo. 2016. “Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated With Silicon Active Substrate (III-V-OIAS).” IEEE Transactions on Electron Devices 63 (8): 3088–95. doi:10.1109/TED.2016.2579642.