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Ultralow Capacitance Transient Voltage Suppressor Design.

Authors :
Lo, Kuo-Hsuan
Huang, Chien-Hao
Weng, Wu-Te
Huang, Tsung-Yi
Su, Hung-Der
Gong, Jeng
Huang, Chih-Fang
Source :
IEEE Transactions on Electron Devices. Aug2016, Vol. 63 Issue 8, p3064-3068. 5p.
Publication Year :
2016

Abstract

A novel transient voltage suppressor (TVS) that features ultralow capacitance is proposed. This structure is able to reduce the input capacitance by 21.1%, and is designed to protect against electrostatic discharge (ESD) issues for high-speed ports. The device is also able to withstand IEC 61000-4-2 contact testing at ±14 kV and transmission line pulse (TLP) testing at 20 A. The device is fabricated using a typical planar Bipolar-CMOS-DMOS (BCD) process. By slotting the doping well to decrease the concentration of diodes, a TVS with an ultralow Cj is obtained without the need to add to the process procedures or without damaging the ESD capability. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
00189383
Volume :
63
Issue :
8
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
117001892
Full Text :
https://doi.org/10.1109/TED.2016.2582320