Cite
Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate.
MLA
Jia-Qi Zhang, et al. “Self-Aligned-Gate AlGaN/GaN Heterostructure Field-Effect Transistor with Titanium Nitride Gate.” Chinese Physics B, vol. 25, no. 8, Aug. 2016, p. 1. EBSCOhost, https://doi.org/10.1088/1674-1056/25/8/087308.
APA
Jia-Qi Zhang, Lei Wang, Liu-An Li, Qing-Peng Wang, Ying Jiang, Hui-Chao Zhu, & Jin-Ping Ao. (2016). Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate. Chinese Physics B, 25(8), 1. https://doi.org/10.1088/1674-1056/25/8/087308
Chicago
Jia-Qi Zhang, Lei Wang, Liu-An Li, Qing-Peng Wang, Ying Jiang, Hui-Chao Zhu, and Jin-Ping Ao. 2016. “Self-Aligned-Gate AlGaN/GaN Heterostructure Field-Effect Transistor with Titanium Nitride Gate.” Chinese Physics B 25 (8): 1. doi:10.1088/1674-1056/25/8/087308.