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Compact distributed multi-finger MOSFET model for circuit-level ESD simulation.
- Source :
-
Microelectronics Reliability . Aug2016, Vol. 63, p11-21. 11p. - Publication Year :
- 2016
-
Abstract
- This work presents a model for multi-finger MOSFETs operating under ESD conditions. It is a distributed model that can reproduce the effect of layout geometry on trigger voltage, on-state resistance, and non-uniform turn-on of device fingers. A three-terminal transmission line pulsing technique enables model parameter extraction. Analysis of measurement data and TCAD simulation reveals that self-heating is not uniform across the device, and this affects the relation between on-state resistance and the number of fingers. With self-heating incorporated, the model correctly reproduces the device I–V curve up to high current levels. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 63
- Database :
- Academic Search Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Academic Journal
- Accession number :
- 117160226
- Full Text :
- https://doi.org/10.1016/j.microrel.2015.12.010