Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors.

MLA

Di Wu, et al. “Uncovering Edge States and Electrical Inhomogeneity in MoS2 Field-Effect Transistors.” Proceedings of the National Academy of Sciences of the United States of America, vol. 113, no. 31, Aug. 2016, pp. 8583–88. EBSCOhost, https://doi.org/10.1073/pnas.1605982113.

APA

Di Wu, Xiao Li, Lan Luan, Xiaoyu Wu, Wei Li, Yogeesh, M. N., Ghosh, R., Zhaodong Chu, Akinwande, D., Qian Niu, & Keji Lai. (2016). Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors. Proceedings of the National Academy of Sciences of the United States of America, 113(31), 8583–8588. https://doi.org/10.1073/pnas.1605982113

Chicago

Di Wu, Xiao Li, Lan Luan, Xiaoyu Wu, Wei Li, Maruthi N. Yogeesh, Rudresh Ghosh, et al. 2016. “Uncovering Edge States and Electrical Inhomogeneity in MoS2 Field-Effect Transistors.” Proceedings of the National Academy of Sciences of the United States of America 113 (31): 8583–88. doi:10.1073/pnas.1605982113.