Back to Search
Start Over
Temporal dependence of transient dark counts in an avalanche photodiode: A solution for power-law behavior of afterpulsing.
- Source :
-
Applied Physics Letters . 8/8/2016, Vol. 109 Issue 6, p061112-1-061112-5. 5p. 1 Chart, 3 Graphs. - Publication Year :
- 2016
-
Abstract
- This paper offers a theoretical explanation of the temperature and temporal dependencies of transient dark count rates (DCRs) measured for a linear-mode silicon avalanche photodiode (APD) and the dependencies of afterpulsing that were measured in Geiger-mode Si and InGaAs/InP APDs. The temporal dependencies exhibit power-law behavior, at least to some extent. For the transient DCR, the value of the DCR for a given time period increases with decreases in temperature, while the power-law behavior remains unchanged. The transient DCR is attributed to electron emissions from traps in the multiplication layer of the APD with a high electric field, and its temporal dependence is explained by a continuous change in the electron emission rate as a function of the electric field strength. The electron emission rate is calculated using a quantum model for phonon-assisted tunnel emission. We applied the theory to the temporal dependence of afterpulsing that was measured for Si and InGaAs/InP APDs. The power-law temporal dependence is attributed to the power-law function of the electron emission rate from the traps as a function of their position across the p-n junction of the APD. Deviations from the power-law temporal dependence can be derived from the upper and lower limits of the electric field strength. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 109
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 117494216
- Full Text :
- https://doi.org/10.1063/1.4960819