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Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond.
- Source :
-
Applied Physics Letters . 8/8/2016, Vol. 109 Issue 6, p062105-1-062105-4. 4p. 2 Black and White Photographs, 1 Chart, 2 Graphs. - Publication Year :
- 2016
-
Abstract
- The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 lm thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 μmh-1. A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 × 1016 cm-3 phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 109
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 117494229
- Full Text :
- https://doi.org/10.1063/1.4960970