One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays.

A dual-gate (DG) amorphous indium–gallium–zinc-oxide thin-film transistor (TFT)-driven pixel circuit for active-matrix organic light-emitting diode displays is presented. One gate of the DGs serves as a primary gate (PG) and the other as an auxiliary gate (AG). The threshold voltage ( V\mathrm {{TH}} ) of the DG TFT under the PG operation is modulated by the AG bias voltage. The V\mathrm {{TH}} variation ( \Delta V\mathrm {{TH}} ) is compensated with the AG and the drain diode-connected structure. The validity of the presented pixel circuit is experimentally verified. The measured current error rates are less than 3.2% at a \Delta V\mathrm {{TH}} of \text TFT = \pm 0.5 V and a \Delta V\mathrm {{TH}} of OLED = 0.5 V with the emission current ranging from 7 nA to 1.13~\mu \textA . [ABSTRACT FROM AUTHOR]