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One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays.

Authors :
Wang, Cuicui
Hu, Zhijin
He, Xin
Liao, Congwei
Zhang, Shengdong
Source :
IEEE Transactions on Electron Devices. Sep2016, Vol. 63 Issue 9, p3800-3803. 4p.
Publication Year :
2016

Abstract

A dual-gate (DG) amorphous indium–gallium–zinc-oxide thin-film transistor (TFT)-driven pixel circuit for active-matrix organic light-emitting diode displays is presented. One gate of the DGs serves as a primary gate (PG) and the other as an auxiliary gate (AG). The threshold voltage ( V\mathrm {{TH}} ) of the DG TFT under the PG operation is modulated by the AG bias voltage. The V\mathrm {{TH}} variation ( \Delta V\mathrm {{TH}} ) is compensated with the AG and the drain diode-connected structure. The validity of the presented pixel circuit is experimentally verified. The measured current error rates are less than 3.2% at a \Delta V\mathrm {{TH}} of \text TFT = \pm 0.5 V and a \Delta V\mathrm {{TH}} of OLED = 0.5 V with the emission current ranging from 7 nA to 1.13~\mu \textA . [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
63
Issue :
9
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
117618557
Full Text :
https://doi.org/10.1109/TED.2016.2587718