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Process Options Impact on ESD Diode Performance in Bulk FinFET Technology.
- Source :
-
IEEE Transactions on Electron Devices . Sep2016, Vol. 63 Issue 9, p3424-3431. 8p. - Publication Year :
- 2016
-
Abstract
- Bulk FinFET is the main technology option for sub-20-nm CMOS nodes. However, newly introduced process options in advanced bulk FinFET technologies can result in significant deterioration of intrinsic electrostatic discharge (ESD) performance. In this paper, the impact on ESD performance induced by the process options beyond 20-nm nodes is explored on the ESD protection diodes. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 63
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 117618592
- Full Text :
- https://doi.org/10.1109/TED.2016.2597000