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Process Options Impact on ESD Diode Performance in Bulk FinFET Technology.

Authors :
Chen, Shih-Hung
Hellings, Geert
Thijs, Steven
Linten, Dimitri
Groeseneken, Guido
Source :
IEEE Transactions on Electron Devices. Sep2016, Vol. 63 Issue 9, p3424-3431. 8p.
Publication Year :
2016

Abstract

Bulk FinFET is the main technology option for sub-20-nm CMOS nodes. However, newly introduced process options in advanced bulk FinFET technologies can result in significant deterioration of intrinsic electrostatic discharge (ESD) performance. In this paper, the impact on ESD performance induced by the process options beyond 20-nm nodes is explored on the ESD protection diodes. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
63
Issue :
9
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
117618592
Full Text :
https://doi.org/10.1109/TED.2016.2597000