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Comparative study of atomic arrangements in equiatomic GeSe and GeTe films before and after crystallization.

Authors :
Choi, Yong Gyu
Shin, Sang Yeol
Golovchak, Roman
Cheong, Byung-ki
Jain, Himanshu
Source :
Journal of Alloys & Compounds. Nov2016, Vol. 686, p273-280. 8p.
Publication Year :
2016

Abstract

EXAFS analysis is performed on equiatomic GeSe and GeTe films to elucidate changes in the local atomic environments induced by crystallization. It reveals for both the films that the 4:2 configuration dominates in their as-deposited amorphous state. In their crystallized state, however, the 3:3 configuration prevails together with quasi-crystalline Ge clusters. The two chalcogenide films exhibit very similar characteristics such as hidden glass transition phenomenon during heating, dominance of the 3:3 configuration in their melt state, decreased optical bandgap upon crystallization, and reduced temperature dependence of electrical conduction accompanied with crystallization. These common properties are partly attributed to the structural changes identified through our EXAFS analysis. In particular, their previously reported non-ohmic current-voltage behaviors associated with the phase switching and the threshold switching are explained in terms of the local structural information. The special phase-change properties of the equiatomic GeSe film is explicated by its amorphous structure. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09258388
Volume :
686
Database :
Academic Search Index
Journal :
Journal of Alloys & Compounds
Publication Type :
Academic Journal
Accession number :
117733939
Full Text :
https://doi.org/10.1016/j.jallcom.2016.06.021