Catalytic growth and characterization of single crystalline Zn doped p-type β-Ga2O3 nanowires.

Single crystalline β -Ga 2 O 3 nanowires with different Zn doping contents were grown via catalytic chemical vapor deposition method. The field-emission scanning electron microscopy showed that when the Zn content was 1.3%, the Zn doped β -Ga 2 O 3 nanowires with uniform size and high density were synthesized. The diameter and length of nanowires were about 50 nm and dozens of micron, respectively. The X-ray diffraction measurements indicated that the position of (202) diffraction peak of samples shifted toward lower diffracting angle with increasing Zn content, which was explained by the substitution of Ga 3+ by Zn 2+ during Zn doping process. Furthermore, the Zn-doped β -Ga 2 O 3 nanowires/n-type β -Ga 2 O 3 thin film p-n homojunction was fabricated. The current-voltage ( I-V) characteristic of the homojunction device showed a good rectifying behavior. This result is suggested that the Zn doped β -Ga 2 O 3 nanowires showed p-type conductivity. [ABSTRACT FROM AUTHOR]