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Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer
- Source :
-
Physica B . 12/31/2003, Vol. 340-342, p818. 5p. - Publication Year :
- 2003
-
Abstract
- We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5×1016 cm−3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er. [Copyright &y& Elsevier]
- Subjects :
- *PHOTOLUMINESCENCE
*SEMICONDUCTOR doping
*SILICON
*SPECTRUM analysis
Subjects
Details
- Language :
- English
- ISSN :
- 09214526
- Volume :
- 340-342
- Database :
- Academic Search Index
- Journal :
- Physica B
- Publication Type :
- Academic Journal
- Accession number :
- 11786541
- Full Text :
- https://doi.org/10.1016/j.physb.2003.09.225