Photostimulated luminescence and defects creation processes in Ce3+-doped epitaxial films of multicomponent Lu3−xGdxGayAl5−yO12 garnets.

Luminescence characteristics of epitaxial films of Ce 3+ -doped multicomponent garnets of the type of Lu 3− x Gd x Ga y Al 5− y O 12 , where x varies from 0.14 to 3 and y varies from 0 to 3.54, are investigated in the 4.2–400 K temperature range by the steady-state and time-resolved spectroscopy methods. Their dependence on the film composition is clarified. The presence in the same film of different Ce 3+ -related luminescence centers is revealed, and a possible structure of these centers is discussed. The processes of the electron and hole centers creation under irradiation of the films in the Ce 3+ -related absorption bands are studied by thermally stimulated luminescence method. The location of the excited 5d 1 level of Ce 3+ with respect to the bottom of the conduction band and the origin and thermal stability parameters of electron traps in the epitaxial films and in the single crystals of the same composition are found to be different. [ABSTRACT FROM AUTHOR]