Gain and offset analysis of comparator using the bisection theorem and a balanced method.

Gain and offset represent two important measures to determine the accuracy of a comparator. Thus, analysis on these parameters is very important as they offer designers better understanding of the circuit and allow exploring trade-offs during design. In this paper, two methods were presented to derive a set of design equations that describe the gain, sensitivity, offset, and systematic mismatches observed in typical comparator circuits. A three-stage, fast complementary metal-oxide semiconductor (CMOS) comparator structure is analysed and simulated in order to validate the proposed methods. A 0.13 μm CMOS technology is used for simulations with 1.5 V supply voltage. Bisection theorem was used for gain and sensitivity analysis. Simulation results show that high gain improvement can be possible by using the design equations. The input offset voltage, due to mismatch in the width of the metal oxide semiconductor field-effect transistors (MOSFET) (W) and mismatches in the threshold voltages of the N and P type MOSFETs(VTHN, VTHP), is analysed using a proposed balanced method. The same comparator structure is used for the input offset voltage analysis. Simulations show that an offset improvement can be achieved following the design equations found through the proposed method. [ABSTRACT FROM PUBLISHER]