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Resistive switching characteristic and uniformity of low-power HfO x -based resistive random access memory with the BN insertion layer.
- Source :
-
Chinese Physics B . Oct2016, Vol. 25 Issue 10, p1-1. 1p. - Publication Year :
- 2016
-
Abstract
- In this letter, the Ta/HfOx/BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each. The reset current is reduced for the HfOx/BN bilayer device compared with that for the Ta/HfOx/TiN structure. Furthermore, the reset current decreases with increasing BN thickness. The HfOx layer is a dominating switching layer, while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons injection into TiN electrode. The current conduction mechanism of low resistance state in the HfOx/BN bilayer device is space-charge-limited current (SCLC), while it is Ohmic conduction in the HfOx device. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 25
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 118317740
- Full Text :
- https://doi.org/10.1088/1674-1056/25/10/107302