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High responsivity solar blind photodetector based on high Mg content MgZnO film grown via pulsed metal organic chemical vapor deposition.
- Source :
-
Sensors & Actuators A: Physical . Oct2016, Vol. 249, p263-268. 6p. - Publication Year :
- 2016
-
Abstract
- Metal-semiconductor-metal (MSM) structured solar blind photodetectors were fabricated based on various Mg content wurtzite Mg x Zn 1−x O epitaxial films grown via pulsed metal organic chemical vapor deposition. The response spectra of the devices showed a peak position that shifts from ∼383 nm to 276 nm for Mg content, x , between 0.0 and 0.51, covering a wide portion of the ultra-violet spectral region, extending well into the solar blind window. At 10 V bias, a large responsivity of ∼1.8 × 10 4 A/W was obtained at 276 nm for a device based on a high Mg content (x = 0.51) MgZnO film. To the best of our knowledge, this responsivity is the highest ever reported for a MgZnO based device and its origin is attributed to large internal gain resulting from carrier trapping at the MgZnO/Ni/Au interface. This is confirmed by the presence of an asymmetric Schottky barrier height on the two MSM contacts. Conversely, the response speed of the devices was slow with the 10%–90% rise and fall times measured to be in the millisecond range. The results reported in this work show the realization of high responsivity MgZnO based solar blind photodetectors, providing a significant step in the development of MgZnO alloy based of detector. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09244247
- Volume :
- 249
- Database :
- Academic Search Index
- Journal :
- Sensors & Actuators A: Physical
- Publication Type :
- Academic Journal
- Accession number :
- 118341569
- Full Text :
- https://doi.org/10.1016/j.sna.2016.08.036